BF908R

Dual-gate MOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortch

BF908R

N-channel dual-gate MOSFET; \n\n•High forward transfer admittance\n\n•High forward transfer admittance to input capacitance ratio\n\n•Integrated back-to-back diodes between gates and source\n\n\n;

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor in a plastic SOT143R package.\n

BF908WR

N-channeldual-gateMOS-FET

DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforwardtransferadmittance •Shortchanne

BU908

iscSiliconNPNPowerTransistor

BU908

SiliconNPNPowerTransistors

BU908

SiliconNPNPowerTransistors

BU908

BU908

BU908F

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

BUZ908

POWERMOSFETSFORAUDIOAPPLICATIONS

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(220V&250V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODES •COMPLIMENTARYN–CHANNELBUZ902&BUZ903

BUZ908D

P-CHANNELPOWERMOSFET

POWERMOSFETSFORAUDIOAPPLICATIONS FEATURES •HIGHSPEEDSWITCHING •SEMEFABDESIGNEDANDDIFFUSED •HIGHVOLTAGE(220V&250V) •HIGHENERGYRATING •ENHANCEMENTMODE •INTEGRALPROTECTIONDIODES •COMPLIMENTARYN–CHANNELBUZ902D&BUZ903D