Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

文件：87.6 Kbytes 页数：8 Pages

PHI

飞利浦

Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short ch

文件：258.18 Kbytes 页数：9 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor in a plastic SOT143R package. \n\n•High forward transfer admittance\n\n•High forward transfer admittance to input capacitance ratio\n\n•Integrated back-to-back diodes between gates and source;

恩XP