首页 >AM741HC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TunerDiodes FEATURES ♦SiliconepitaxialplanarcapacitancediodeswithverywideeffectivecapacitancevariationfortunigtheVHFrangeandhyperbandintelevisiontuners. ♦Thesediodesareavailableassinglesorasmatchedsetsoftwoormoreunitsaccordingtothetrackingconditiondescribedinthet | GE GE Industrial Company | GE | ||
TunerDiodes FEATURES ♦SiliconepitaxialplanarcapacitancediodeswithverywideeffectivecapacitancevariationfortunigtheVHFrangeandhyperbandintelevisiontuners. ♦Thesediodesareavailableassinglesorasmatchedsetsoftwoormoreunitsaccordingtothetrackingconditiondescribedinthet | GE GE Industrial Company | GE | ||
NPN7GHzWIDEBANDTRANSISTOR | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
Highvoltagefast-switchingNPNPowerTransistor Description Thedevicesaremanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability. Thankstoanincreasedintermediatelayer,ithasanintrinsicruggednesswhichenablesthetransistortowithstandanhighcollectorcurrentlevel | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterBreakdownVoltage :V(BR)CEO=400V(Min.) ·CollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=0.7A APPLICATIONS ·Designedforelectroniclampballastcircuitsswitch-modepowersuppliesapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Highvoltagefast-switchingNPNpowertransistors Features ■Highvoltagecapability ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies. Description Thedevicesaremanufacturedusing | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistors Features ■Highvoltagecapability ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies. Description Thedevicesaremanufacturedusing | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Highvoltagefast-switchingNPNpowertransistor Description ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. Thankstoanincreasedintermediatelayer,ithasanintrinsicruggednesswhichenablesthetransistortowithstandanhighcollectorcurrentleveld | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
5th/4thGenIntel®Xeon®ScalableFamily | DFIDFI Inc 友通资讯友通资讯股份有限公司 | DFI |
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