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AMZ-207

AMZ&AMYSeriesPassive5-TapDIP/SMDDelayModules

RHOMBUS-IND

Rhombus Industries Inc.

AN207

12-nsDG611SwitchFamilyCombinesBenefitsofCMOSandDMOSTechnologies

12-nsDG611SwitchFamilyCombinesBenefitsofCMOSandDMOSTechnologies TheDG611,DG612,andDG613areextremelylow-power,high-speedanalogswitchesdesignedtooptimizecircuitperformanceinhigh-speedswitchingapplications.Eachofthesedevicesintegrateslow-powerCMOSdriverswithhig

VishayVishay Siliconix

威世科技威世科技半导体

AN-207

ADVANTAGESOFENHANCEDRECEIVERFAILSAFEFEATURES

EXARExar Corporation

艾科嘉艾科嘉(杭州)信息技术有限公司

APC207

RailtoRailOutputCMOSSingleOperatingAmplifier

[ANPECElectronicsCorp.] GeneralDescription TheAPC207/208bringsperformanceandenconomywithhighgain,CMOSoperatingamplifier,combiningrailtorailoutputrangewithlargeoutputcurrent.Itprovidesalowinputbiascurrent2pA.Theoutputswingoftheamplifier,guaranteedforloads

ETCList of Unclassifed Manufacturers

未分类制造商

APC207BI-TR

RailtoRailOutputCMOSSingleOperatingAmplifier

[ANPECElectronicsCorp.] GeneralDescription TheAPC207/208bringsperformanceandenconomywithhighgain,CMOSoperatingamplifier,combiningrailtorailoutputrangewithlargeoutputcurrent.Itprovidesalowinputbiascurrent2pA.Theoutputswingoftheamplifier,guaranteedforloads

ETCList of Unclassifed Manufacturers

未分类制造商

AQZ207

PhotoMOSHE1FormAHighCapacity

FEATURES GreatlyincreasedloadcurrentinacompactDIP package Continuousloadcurrent:3.5A(AQV251G) Greatlyimprovedspecificationsallowyoutousethis inplaceofmercuryandmechanicalrelays Lowon-resistance(Typ.35mΩ,AQV251G)

PanasonicPanasonic Semiconductor

松下松下电器

AQZ207D

POWERPhotoMOSRELAYS(VoltageSensitiveType)

POWERPhotoMOSRELAYS(VoltageSensitiveType) FEATURES 1.AvoltagesensitivepowerPhotoMOSrelay ConventionalpowerPhotoMOSrelaysareconnectedexternallytoaninputlimitingresistorinordertoobtaintheappropriateLEDcurrent.Addinganinternalconstant-currentelementrender

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AQZ207D

PhotoMOSHE1FormAHighCapacity

FEATURES GreatlyincreasedloadcurrentinacompactDIP package Continuousloadcurrent:3.5A(AQV251G) Greatlyimprovedspecificationsallowyoutousethis inplaceofmercuryandmechanicalrelays Lowon-resistance(Typ.35mΩ,AQV251G)

PanasonicPanasonic Semiconductor

松下松下电器

AQZ207G

PhotoMOSHE1FormAHighCapacity

FEATURES GreatlyincreasedloadcurrentinacompactDIP package Continuousloadcurrent:3.5A(AQV251G) Greatlyimprovedspecificationsallowyoutousethis inplaceofmercuryandmechanicalrelays Lowon-resistance(Typ.35mΩ,AQV251G)

PanasonicPanasonic Semiconductor

松下松下电器

AQZ207V

POWERPhotoMOSRELAYSwithInternalVaristor

FEATURES 1.PowerPhotoMOSrelaywithinternalvaristor AninternalvaristorontheoutputsideprotectstheoutputMOSFETfromthereversevoltagefromanexternalvoltagesurgeorinductiveload. 2.HighcapacityPhotoMOSrelay Supportscontrolofminuteloadstoamaximum3.0A.Suitabl

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

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