General Purpose Transistors NPN TO-92

Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • General purpose Switching and Amplifier Applications.

文件：257.16 Kbytes 页数：4 Pages

MULTICOMP

易络盟

General Purpose Switching Transistors

Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP.

文件：1.01237 Mbytes 页数：6 Pages

MULTICOMP

易络盟

丝印：NJ；Package：SOT23；High Speed Switching Applications

○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

文件：598.83 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：NN；Package：SOT23；High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Applications • High-Speed Switching

文件：241.67 Kbytes 页数：8 Pages

TOSHIBA

东芝

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

Low Power Bipolar Transistors

文件：254.17 Kbytes 页数：7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商