丝印：NN；Package：SOT23；High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Applications • High-Speed Switching

文件：241.67 Kbytes 页数：8 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Feature：High ESD protected\nPolarity：N-ch\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.4 A \nPower Dissipation PD 0.32 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

场效应管(MOSFET)

ElecSuper

静芯微

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子