N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

文件：1.2578 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

0.3A, 60V, 0.15W, N Channel, Small Signal MOSFETs

Galaxy

银河微电

50V N-Channel Enhancement Mode MOSFET

文件：203.28 Kbytes 页数：5 Pages

TSC

台湾半导体

50V Dual N-Channel Enhancement Mode MOSFET

文件：200.96 Kbytes 页数：5 Pages

TSC

台湾半导体

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important.

文件：24.81 Kbytes 页数：2 Pages

CALOGIC