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T2N7002AK

High Speed Switching Applications

○HighSpeedSwitchingApplications •ESDprotectedgate •LowON-resistanceRDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex

2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N7002

N-CHANNELENHANCEMENT-MODEMOSFET

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc

DIODESDiodes Incorporated

达尔科技

DIODES

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

2N7002

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant.

Calogic

Calogic

Calogic

2N7002

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns

WEITRONWEITRON

威堂電子科技

WEITRON

2N7002

NChannelSmallSignalMOSFET

●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER

STANSONStanson Technology

Stanson 科技

STANSON

2N7002

N-ChannelEnhancementModeFieldEffectTransistor

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

2N7002

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical

semiWell

semiWell

semiWell

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7002

N-ChannelSmallSignalMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

2N7002

N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET

Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2N7002

N-CHANNELTRANSISTOR

Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

2N7002

DMOSTransistors(N-Channel)

GE

GE Industrial Company

GE
供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
2020+
SOT-23
90000
专注TI进口原装现货
询价
TOSHIBA/东芝
21+
SOP
250
只做进口原装假一罚百
询价
TOSHIBA/东芝
23+
SOT23
32078
10年以上分销商,原装进口件,服务型企业
询价
TOSHIBA/东芝
20+
SOT-23
120000
原装正品 可含税交易
询价
TOSHIBA/东芝
SOT23
7906200
询价
TOSHIBA/东芝
23+/24+
SOT23-3
9865
主推型号,原装正品,终端BOM表可配单,可开13点税
询价
TOSHIBA/东芝
1948+
SOT-23
6852
只做原装正品现货!或订货假一赔十!
询价
TOSHIBA/东芝
20+
SOT-23
43000
原装优势主营型号-可开原型号增税票
询价
TOSHIBA/东芝
22+
SOT-23
300000
特价原装现货,能提供更多数量 一片起订
询价
TOSHIBA/东芝
2048+
SOT-23
9852
只做原装正品现货!或订货假一赔十!
询价
更多T2N7002AK供应商 更新时间2024-4-26 17:34:00