N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward transfer admittance • Short channe

文件：103.19 Kbytes 页数：7 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel dual-gate MOS-FET

文件：75.64 Kbytes 页数：7 Pages

JMNIC

锦美电子

N-channel dual-gate MOS-FET

文件：75.64 Kbytes 页数：7 Pages

JMNIC

锦美电子

N-channel dual-gate MOS-FET

恩XP