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APT904RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT904RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AR904

RECTIFIERDIODE

Repetitivevoltageupto2900V Meanforwardcurrent1230A Surgecurrent10.1kA

POSEICO

Power Semiconductors

AT-904

StriplineMountingFixedAttenuators(DCto8GHz)

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

BF904

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF904R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143BandSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF904WR

N-channeldual-gateMOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Speciallyde

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

供应商型号品牌批号封装库存备注价格
ADI/亚德诺
20+
EvaluationBoard
33680
ADI全新原装-可开原型号增税票
询价
ADI
20+
射频元件
19
就找我吧!--邀您体验愉快问购元件!
询价
ADI(亚德诺)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
AD
1824+
NA
16
加我QQ或微信咨询更多详细信息,
询价
ADI(亚德诺)
21+
6000
只做原装正品,卖元器件不赚钱交个朋友
询价
ADI(亚德诺)
22+
NA
10000
原厂原装现货
询价
ADI(亚德诺)
23+
N/A
10000
正规渠道,只有原装!
询价
ADI(亚德诺)
23+
NA
10000
原装,BOM表可配单
询价
ADI
22+
N/A
60000
专注配单,只做原装现货
询价
ADI/亚德诺
22+
66900
原封装
询价
更多ADRV904X-HB/PCBZ供应商 更新时间2025-7-14 14:13:00