isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：297.81 Kbytes 页数：2 Pages

ISC

无锡固电

RECTIFIER DIODE

Repetitive voltage up to 2900V Mean forward current 1230A Surge current 10.1kA

文件：167.27 Kbytes 页数：4 Pages

POSEICO

Stripline Mounting Fixed Attenuators (DC to 8 GHz)

文件：81.63 Kbytes 页数：3 Pages

HIROSEHirose Electric Company

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