BF904AWR中文资料飞利浦数据手册PDF规格书

DESCRIPTION

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES

• Specially designed for use at 5 V supply voltage

• Short channel transistor with high transfer admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.