Automotive-grade ACEPACK DRIVE power module, sixpack topology 1200 V, 3.5 mOhm typ. SiC MOSFET gen.2 based

所有功能AQG 324 qualified1200 V blocking voltage3.5 mΩ of typical RDS(on)Maximum operative junction temperature TJop = 175 °CVery low switching energyLow inductive compact design for an higher power density • AQG 324 qualified\n• 1200 V blocking voltage\n• 3.5 mΩ of typical RDS(on)\n• Maximum operative junction temperature TJop = 175 °C\n• Very low switching energy\n• Low inductive compact design for an higher power density• Si3N4 AMB substrate to improve thermal performance\n• SiC Power MOSFET chip si;

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意法半导体