BR50N06

N-CHANNELMOSFETinaTO-220PlasticPackage

BR50N06

50A,60VHeatsinkPlanarN-ChannelPowerMOSFET

BR50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

BRB50N06

N-CHANNELMOSFETinaTO-263PlasticPackage

BRD50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

CEB50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CEB50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEB50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CED50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,36A,RDS(ON)=18mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.