丝印：ADM40N03E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM40N30E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：576.52 Kbytes 页数：7 Pages

ADV

爱德微

MOSFET

ADV

爱德微

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：386.95 Kbytes 页数：5 Pages

SAMHOP

三合微科