丝印：ADM40N03E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM40N30E uses advanced trench technology and design to provide excellent RDS(ON) with

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ADV

爱德微

MOSFET

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM40N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

文件：424.49 Kbytes 页数：6 Pages

ADV

爱德微

Fast Switching Characteristic RoHS Compliant & Halogen-Free

文件：102.8 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

文件：106.24 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子