P-Channel Enhancement Mode Field Effect Transistor

文件：544.52 Kbytes 页数：5 Pages

ADV

爱德微

MOSFET

ADV

爱德微

This application note is intended for system designers

文件：574.55 Kbytes 页数：35 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：310.32 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.81 Kbytes 页数：2 Pages

ISC

无锡固电