Level 4 EMC Protected RS-485 Transceiver with Full ±42 V Fault Protection

FEATURES Certified Level 4 EMC protection on RS-485 A and B bus pins IEC 61000-4-5 surge protection (±4 kV) IEC 61000-4-4 EFT protection (±2 kV) IEC 61000-4-2 ESD protection ±8 kV contact discharge ±15 kV air gap discharge Certified IEC 61000-4-6 conducted RF immunity (10 V/m rms) RS-485 A

文件：557.96 Kbytes 页数：19 Pages

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Level 4 EMC Protected RS-485 Transceiver with Full ±42 V Fault Protection

FEATURES Certified Level 4 EMC protection on RS-485 A and B bus pins IEC 61000-4-5 surge protection (±4 kV) IEC 61000-4-4 EFT protection (±2 kV) IEC 61000-4-2 ESD protection ±8 kV contact discharge ±15 kV air gap discharge Certified IEC 61000-4-6 conducted RF immunity (10 V/m rms) RS-485 A

文件：557.96 Kbytes 页数：19 Pages

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Level 4 EMC Protected RS-485 Transceiver with Full ±42 V Fault Protection

FEATURES Certified Level 4 EMC protection on RS-485 A and B bus pins IEC 61000-4-5 surge protection (±4 kV) IEC 61000-4-4 EFT protection (±2 kV) IEC 61000-4-2 ESD protection ±8 kV contact discharge ±15 kV air gap discharge Certified IEC 61000-4-6 conducted RF immunity (10 V/m rms) RS-485 A

文件：557.96 Kbytes 页数：19 Pages

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Level 4 EMC Protected RS-485 Transceiver with Full ±42 V Fault Protection

FEATURES Certified Level 4 EMC protection on RS-485 A and B bus pins IEC 61000-4-5 surge protection (±4 kV) IEC 61000-4-4 EFT protection (±2 kV) IEC 61000-4-2 ESD protection ±8 kV contact discharge ±15 kV air gap discharge Certified IEC 61000-4-6 conducted RF immunity (10 V/m rms) RS-485 A

文件：557.96 Kbytes 页数：19 Pages

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Level 4 EMC Protected RS-485 Transceiver with Full ±42 V Fault Protection

FEATURES Certified Level 4 EMC protection on RS-485 A and B bus pins IEC 61000-4-5 surge protection (±4 kV) IEC 61000-4-4 EFT protection (±2 kV) IEC 61000-4-2 ESD protection ±8 kV contact discharge ±15 kV air gap discharge Certified IEC 61000-4-6 conducted RF immunity (10 V/m rms) RS-485 A

文件：557.96 Kbytes 页数：19 Pages

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丝印：M30N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM30N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

文件：764.92 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM30N06E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：796.83 Kbytes 页数：6 Pages

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● High Power and current handing capability ● Green Device Available Description: The ADM30P06E is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide super

文件：638 Kbytes 页数：5 Pages

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed

文件：863.04 Kbytes 页数：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Green Device Available

文件：347.83 Kbytes 页数：5 Pages

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