ATI2305CGFADJ

DC-DCConverter

FEATURES Efficiencyupto96 Only40μA(TYP.)QuiescentCurrent OutputCurrentupto1A InternalSynchronousRectifier SwitchingFrequency:1.5MHz Under-VoltageLockout SoftStart ShortCircuitProtection ThermalShutdown 5-pinSmallSOT23-5,DFN2X26-PinandQFN3X3

BC2305

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

BLM2305

P-ChannelEnhancementModePowerMOSFET

BU2305

CRtimer

BU2305F

CRtimer

CEH2305

P-ChannelEnhancementModeFieldEffectTransistor

CEH2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. RDS(ON)=119mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CEH2305A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=70mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.