丝印：ADM13P10E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed ● It is ESD protested

文件：955.23 Kbytes 页数：6 Pages

ADV

爱德微

丝印：ADM13P10E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed ● It is ESD protested

文件：955.23 Kbytes 页数：6 Pages

ADV

爱德微