N-Channel Enhancement Mode Field Effect Transistor

文件：1.13556 Mbytes 页数：6 Pages

ADV

爱德微

MOSFET

ADV

爱德微

N-CHANNEL MOSFET in a TO-220F Plastic Package

文件：794.16 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：140.95 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.30558 Mbytes 页数：4 Pages

DOINGTER

杜因特