AOB409L

iscP-ChannelMOSFETTransistor

AOD409

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD409isPb-free(meets

AOD409

P-ChannelEnhancementModeFieldEffectTransistor

AOD409

P-ChannelEnhancementModeFieldEffectTransistor

AOD409

iscP-ChannelMOSFETTransistor

•FEATURES •WithTO-252(DPAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchin

AOD409

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •Materialcategorization: APPLICATIONS •LoadSwitch

AOD409

P-Channel-60V(D-S)MOSFET

Features VDS(V)=-60V ID=-26A(VGS=-10V) RDS(ON)

AOD409

P-Channel-60V(D-S)MOSFET

GeneralDescription TheAOD409usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandlow gateresistance.Withtheexcellentthermalresistance oftheTO-252package,thisdeviceiswellsuitedfor highcurrentloadapplications. Features VDS(V)=-60V ID=-

AOD409G

iscP-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=-28A@TC=25℃ •DrainSourceVoltage- :VDSS=-60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max) •100avalanchetested •Minimum

AOD409L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications.StandardProductAOD409isPb-free(meets