OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

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提供OVP和EMI保护的精密、低噪声、低偏置电流、单通道运算放大器

ADA4177-1 单通道、ADA4177-2 双通道和 ADA4177-4 四通道放大器具有低失调电压（2 μV典型值）和低漂移（1 μV/°C最大值），低输入偏置电流、低噪声和低功耗（500 μA典型值）特性。 使用1000 pF以上容性负载时输出稳定，无需外部补偿。 \n\n ADA4177-1、ADA4177-2和ADA4177-4的输入确立了精密放大器鲁棒性的新标准，可为偏离任一电源32 V的信号提供输入保护，以及为1000 MHz时的电磁干扰(EMI)提供70 dB抑制能力。 \n\n 该放大器的应用包括传感器信号调理（例如热电偶、RTD、应变计）、过程控制前端 • 低失调电压： 60 μV（最大值，25°C，8引脚和14引脚SOIC） \n• 低失调电压漂移： 1 μV/（最大值，8引脚和14引脚SOIC） \n• 低输入偏置电流： 1 nA（最大值，25℃） \n• 低压噪声密度： 8 nV/√Hz（典型值，1 kHz） \n• 大信号电压增益(AVO)： 100 dB（最小值，全电源电压和工作温度范围） \n• 支持高于或低于供电轨电压32 V的输入过压保护 \n• 集成EMI滤波器\n• 轨到轨输出摆幅\n• 低电源电流： 每个放大器500 µA（典型值） \n• 欲了解更多特性，请参考数据手册;

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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丝印：A3E；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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丝印：A3E；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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丝印：A3E；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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