丝印：A3E；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

AD

亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

AD

亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

AD

亚德诺