OVP and EMI Protected, Precision, Low Noise and Low Bias Current Op Amp

FEATURES Low offset voltage: 120 μV maximum at 25°C Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 108 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and

文件：159.48 Kbytes 页数：7 Pages

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

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亚德诺