OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

文件：854.15 Kbytes 页数：31 Pages

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提供OVP与EMI保护的精密、低噪声、低偏置电流运算放大器

ADA4177-2双通道和ADA4177-4四通道放大器具有低失调电压（2 μV典型值）和低漂移（1 μV/°C最大值），低输入偏置电流、低噪声和低功耗（500 μA典型值）特性。 使用1000 pF以上容性负载时输出稳定，无需外部补偿。\n\n ADA4177-2和ADA4177-4的输入确立了精密放大器鲁棒性的新标杆，可为偏离任一电源32 V的信号提供输入保护，以及为1000 MHz时的电磁干扰(EMI)提供70 dB抑制能力。 该放大器的应用包括传感器信号调理（例如热电偶、RTD、应变计）、过程控制前端放大器和光学及无线传输系统中的精密二极管功率测量。 \n\n AD • 低失调电压： 60 μV（最大值，25°C，8引脚和14引脚SOIC） \n\n• 低失调电压漂移： 1 μV/°C（最大值，8引脚和14引脚SOIC） \n\n• 低输入偏置电流：1 nA（最大值，25℃） \n\n• 低压噪声密度： 8 nV/√Hz（典型值，1 kHz）\n\n• 大信号电压增益(AVO)： 100 dB（最小值，全电源电压和工作温度范围） \n\n• 支持高于或低于供电轨电压32 V的输入过压保护\n\n• 集成EMI滤波器\n70 dB（1000 MHz下的典型抑制）\n90 dB（2400 MHz下的典型抑制）\n\n• 轨到轨输出摆幅\n\n• 低电源电流： ;

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丝印：A36；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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丝印：A36；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

丝印：A36；Package：MSOP；OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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亚德诺

OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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OVP and EMI Protected, Precision, Low Noise and Low Bias Current Op Amp

FEATURES Low offset voltage: 120 μV maximum at 25°C Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 108 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and

文件：159.48 Kbytes 页数：7 Pages

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