ADA4177-1ARMZ-R7中文资料亚德诺数据手册PDF规格书

FEATURES

Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC)

Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC)

Low input bias current: 1 nA maximum at 25°C

Low voltage noise density: 8 nV/√Hz typical at 1 kHz

Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature

Input overvoltage protection to 32 V above and below the supply voltage rail

Integrated EMI filter

70 dB typical rejection at 1000 MHz

90 dB typical rejection at 2400 MHz

Rail-to-rail output swing

Low supply current: 500 μA typical per amplifier

Wide bandwidth

Gain bandwidth product (AV = 100): 3.5 MHz typical

Unity-gain crossover (AV = 1): 3.5 MHz typical

−3 dB bandwidth (AV = 1): 6 MHz typical

Dual-supply operation

Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V

Unity-gain stable

No phase reversal

Long-term offset voltage drift (10,000 hours): 2 μV typical

Temperature hysteresis: 2 μV typical

APPLICATIONS

Wireless base station control circuits

Optical network control circuits

Instrumentation

Sensors and controls

Thermocouples, RTDs, strain gages, shunt current measurements