ADA4177-1ARMZ中文资料亚德诺数据手册PDF规格书

厂商型号	ADA4177-1ARMZ
功能描述	OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps
丝印标识	A3E
封装外壳	MSOP
文件大小	1.0819 Mbytes
页面数量	33 页
生产厂商	Analog Devices
企业简称	AD【亚德诺】
中文名称	亚德诺半导体技术有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-11 18:00:00
人工找货	ADA4177-1ARMZ价格和库存，欢迎联系客服免费人工找货

FEATURES

Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC)

Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC)

Low input bias current: 1 nA maximum at 25°C

Low voltage noise density: 8 nV/√Hz typical at 1 kHz

Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature

Input overvoltage protection to 32 V above and below the supply voltage rail

Integrated EMI filter

70 dB typical rejection at 1000 MHz

90 dB typical rejection at 2400 MHz

Rail-to-rail output swing

Low supply current: 500 μA typical per amplifier

Wide bandwidth

Gain bandwidth product (AV = 100): 3.5 MHz typical

Unity-gain crossover (AV = 1): 3.5 MHz typical

−3 dB bandwidth (AV = 1): 6 MHz typical

Dual-supply operation

Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V

Unity-gain stable

No phase reversal

Long-term offset voltage drift (10,000 hours): 2 μV typical

Temperature hysteresis: 2 μV typical

APPLICATIONS

Wireless base station control circuits

Optical network control circuits

Instrumentation

Sensors and controls

Thermocouples, RTDs, strain gages, shunt current measurements