MOS(场效应管)

Anbonsemi

安邦

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with

文件：952.54 Kbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

文件：510.34 Kbytes 页数：6 Pages

ADV

爱德微

ThinkiSemi 50A,60V Insualted Planar N-Channel Power MOSFETs

文件：1.38924 Mbytes 页数：7 Pages

THINKISEMI

思祁半导体