丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC(D)；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19825 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT00M；Package：SOIC；CDx4ACT00 Quadruple 2-Input Positive-nand Gates

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protec

文件：1.19824 Mbytes 页数：22 Pages

TI

德州仪器

丝印：ACT04M；Package：SOIC；CDx4ACT04 Hex Inverters

1 Features • Inputs are TTL-voltage compatible • Speed of Bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ± 24mA output drive current – Fanout to 15 F Devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD prote

文件：1.07426 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT04M；Package：SOIC；CDx4ACT04 Hex Inverters

1 Features • Inputs are TTL-voltage compatible • Speed of Bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • ± 24mA output drive current – Fanout to 15 F Devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD prote

文件：1.07426 Mbytes 页数：23 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：ACT05M；Package：SOIC；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

丝印：ACT08M；Package：SOIC；CDx4ACT08 Quadruple 2-Input Positive-and Gates

1 Features • Inputs are TTL-voltage compatible • Speed of Bipolar F, AS, and S, with significantly reduced power consumption • Balanced propagation delays • Buffered inputs • ±24mA output drive current – Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exc

文件：1.16894 Mbytes 页数：23 Pages

TI

德州仪器