Radiation Hardened Quad 2-Input NAND Gate with Open Drain

Description The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage. Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Require

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INTERSIL

Radiation Hardened Quad 2-InputNAND Gate with Open Drain

Features • Devices QML Qualified in Accordance with MIL-PRF38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose >300K RAD (Si) • Single Event Upset (SEU) Immunity:

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CMOS Quad 2-Input NAND Gate with Open Drain

The Intersil ACS03MS is a Radiation Hardened quad 2-input NAND gate with open drain outputs. The open drain output can drive resistive loads from a separate supply voltage.\nThe ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiatio • Devices QML Qualified in Accordance with MIL-PRF-38535 \n• 1.25 Micron Radiation Hardened SOS CMOS \n• Single Event Upset (SEU) Immunity: -10 Errors/Bit/Day (Typ) \n• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse \n• Latch-Up Free Under Any Conditions \n• Significant Power Reduction Compared to;

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SOP8

ST

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SOP8

ST

上传：深圳市众芯源半导体有限公司