AC817-40Q

45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features BVCEO>45V IC=0.5AContinuousCollectorCurrent ICM=1APeakPulseCurrent ComplementaryPNPTypes:BC807-16 IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSComp

AC817-40Q-7

Marking：2D8；Package：SOT23；45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features BVCEO>45V IC=0.5AContinuousCollectorCurrent ICM=1APeakPulseCurrent ComplementaryPNPTypes:BC807-16 IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSComp

AC817-40Q-7

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 45V 0.5A SOT23-3 T\u0026R

BC817-40

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

BC817-40

NPNSmallSignalTransistor310mW

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •IdeallySuitedforAutomaticInsertion •

BC817-40

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807)

BC817-40

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

BC817-40

SurfacemountSi-EpitaxialPlanarTransistors

Features GeneralPurposeThreecurrentgaingroupsComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgradeSuffix-Q:AEC-Q101compliant1)Suffix-AQ:inAEC-Q101qualification1) MechanicalData1) Tapedan

BC817-40

SurfacemountSi-EpitaxialPlanarTransistors

•Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC817-40

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)