丝印：ABT16841；Package：SSOP；20-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC

文件：268.84 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT16841；Package：SSOP；20-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC

文件：268.84 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT16841；Package：SSOP；20-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC

文件：268.84 Kbytes 页数：12 Pages

TI

德州仪器

丝印：ABT16841；Package：SSOP；20-BIT BUS-INTERFACE D-TYPE LATCHES WITH 3-STATE OUTPUTS

Members of the Texas Instruments WidebusE Family State-of-the-Art EPIC-IIBE BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC

文件：268.84 Kbytes 页数：12 Pages

TI

德州仪器