丝印：AB541IQ1；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JES

文件：344.02 Kbytes 页数：12 Pages

TI

德州仪器

丝印：AB541IQ1；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JES

文件：344.02 Kbytes 页数：12 Pages

TI

德州仪器

丝印：AB541IQ1；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 150 V Using Machine Model (C = 200 pF, R = 0) State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JES

文件：344.02 Kbytes 页数：12 Pages

TI

德州仪器