SN74ABT541BIPWRQ1集成电路（IC）的缓冲器驱动器接收器收发器规格书PDF中文资料

SN74ABT541BIPWRQ1属于集成电路（IC）的缓冲器驱动器接收器收发器。由德州仪器制造生产的SN74ABT541BIPWRQ1缓冲器，驱动器，接收器，收发器逻辑缓冲器、驱动器、接收器和收发器允许隔离对某个电路的逻辑信号的访问，以用于另一电路。缓冲器将其输入信号（不变或反相）传递到其输出，并可能用于清除弱信号或驱动负载。在布尔逻辑仿真器中，缓冲器主要用于增加传播延迟。逻辑接收器和收发器允许在数据总线之间进行隔离通信。

Qualified for Automotive Applications

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 150 V

Using Machine Model (C = 200 pF, R = 0)

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design

Significantly Reduces Power Dissipation

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) <1 V

at VCC = 5 V, TA = 25°C

High-Impedance State During Power Up

and Power Down

High-Drive Outputs (−32-mA IOH, 64-mA IOL)

description

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address

registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit

board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or

OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down.

However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor;

the minimum value of the resistor is determined by the current-sinking capability of the driver.