CABT541BIPWRG4Q1.B中文资料德州仪器数据手册PDF规格书

Qualified for Automotive Applications

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 150 V

Using Machine Model (C = 200 pF, R = 0)

State-of-the-Art EPIC-ΙΙB™ BiCMOS Design

Significantly Reduces Power Dissipation

Latch-Up Performance Exceeds 500 mA Per

JEDEC Standard JESD-17

Typical VOLP (Output Ground Bounce) <1 V

at VCC = 5 V, TA = 25°C

High-Impedance State During Power Up

and Power Down

High-Drive Outputs (−32-mA IOH, 64-mA IOL)

description

The SN74ABT541B octal buffer and line driver is ideal for driving bus lines or buffering memory address

registers. The device features inputs and outputs on opposite sides of the package to facilitate printed circuit

board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or

OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down.

However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor;

the minimum value of the resistor is determined by the current-sinking capability of the driver.