丝印：A6G；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 页数：7 Pages

FS

丝印：A6G；Package：SOT-23；Bias Resistor Transistors

文件：248.47 Kbytes 页数：7 Pages

FS

丝印：a6G；Package：SC-70-5；300mA Low Noise High PSRR LDO with Shutdown

文件：885.43 Kbytes 页数：17 Pages

FITIPOWER

天钰科技

丝印：A6G；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：A6G；Package：SOT-23；PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

文件：644.3 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

Airfast RF Power GaN Transistor

1 General description This 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz. 2 Features and benefits • High terminal impedances for optimal broadband performance • Designed for low complexity

文件：435.84 Kbytes 页数：17 Pages

恩XP

Airfast RF Power GaN Transistor

1 General description This 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz. 2 Features and benefits • High terminal impedances for optimal broadband performance • Designed for low complexity

文件：435.84 Kbytes 页数：17 Pages

恩XP

A6G2C系列无线IoT核心板

ZLG

致远电子

A6G35S006N 2496–5000 MHz, 28 dBm Avg., 48 V Airfast® RF Power GaN Transistor

恩XP