A6G35S006NT6中文资料恩XP数据手册PDF规格书

1 General description

This 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications

covering the frequency range of 2496 to 5000 MHz.

2 Features and benefits

• High terminal impedances for optimal broadband performance

• Designed for low complexity linearization systems

• Universal broadband driver

• Optimized for massive MIMO active antenna systems for 5G base stations

3 Typical performance

VDD = 48 Vdc, IDQ = 18 mA, Pout = 28 dBm Avg., input signal PAR = 9.9 dB @ 0.01 % probability on CCDF.[1]

Table 1. 3500 MHz — Typical single-carrier W-CDMA reference circuit performance