丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMG2305UXQ General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67243 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The IRLML2244 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67241 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The NTR3A30PZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67241 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV27UPEA General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67244 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID = -4.1A RDS(ON)

文件：397.56 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The Si2323CDS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.6724 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；P-Channel Enhancement Mode Power MOSFET

文件：1.16282 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：A5sHB；P-Channel Enhancement Mode Power MOSFET

文件：1.23589 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT23-3L；P-Channel Enhancement Mode MOSFET

文件：1.76088 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

文件：2.58789 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子