N-Channel Enhancement-Mode Lateral MOSFET

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N-Channel Enhancement-Mode Lateral MOSFET

文件：779.99 Kbytes 页数：16 Pages

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RF Power LDMOS Transistor

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RF Power LDMOS Transistor

文件：831.07 Kbytes 页数：16 Pages

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RF Power LDMOS Transistor

文件：319.44 Kbytes 页数：8 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：504.79 Kbytes 页数：17 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：504.79 Kbytes 页数：17 Pages

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RF Power LDMOS Transistor

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RF Power LDMOS Transistor

文件：389.33 Kbytes 页数：16 Pages

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1805-1880 MHz，56 W 平均值，28 V Airfast®LDMOS射频功率晶体管

The A3T18H360W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. • Advanced high performance in-package Doherty\n• Designed for wide instantaneous bandwidth applications\n• Greater negative gate-source voltage range for improved class C operation\n• Able to withstand extremely high output VSWR and broadband operating conditions\n• Designed for digital predistorti;

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