BA304

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

BB304

SiliconEpitaxialPlanarDualCapacitanceDiodes

Features: Commoncathode

BB304A

SiliconVariableCapacitanceDiode(ForFMtunersMonolithicchipwithcommoncathodeforperfecttrackingofbothdiodes)

SiliconVariableCapacitanceDiode PreliminaryData ●ForFMtuners ●Monolithicchipwithcommoncathodeforperfecttrackingofbothdiodes ●Uniformsquarelawcharacteristics ●IdealHifituningdevicewhenusedinLow-distortionback-tobackconfiguration ●Color-codedcapacitancesubgr

BB304C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

BB304C

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

BB304CDW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandi

BB304M

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

BB304M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

BB304MDW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Highgain; (PG=29dBtyp.atf=200MHz) •Lownoisecharacteristics; (NF=1.2dBtyp.atf=200MHz) •Widesupplyvoltagerange; Applicablewith5Vto9Vsupplyvoltage. •Withstandingt

BB-UHR304

IndustrialUSB2.0&3.0Hubs

Features(modeldependent) •ExpandoneUSBportto4or7USBports •USB2.0&USB3.0 •ESDprotection •HighretentionUSBconnectorsgripcablestight •Wideoperatingtemperature(USB2.0hubs) •USBhostportpowerorexternalPSUpower •Metalorplasticenclosures–desk,panel,DI