N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 页数：4 Pages

HAOHAI

浩海电子

Process Sealed Subminiature Toggles

文件：259.13 Kbytes 页数：7 Pages

NKK

恩楷楷

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 页数：4 Pages

HAOHAI

浩海电子

丝印：A2SHB；Package：SOT-23；N-Channel 1.25-W, 2.5-V MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

文件：45.45 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

文件：1.45725 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：A2SHB；Package：SOT-23；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：832.45 Kbytes 页数：3 Pages

CHENDA

辰达半导体

丝印：A2SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：765.18 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：A2SHB；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：540.78 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

丝印：A2SHB；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.74159 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：A2SHB；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.54741 Mbytes 页数：3 Pages

DOINGTER

杜因特