RF Power GaN Transistor

文件：325.82 Kbytes 页数：10 Pages

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RF Power GaN Transistor

文件：325.82 Kbytes 页数：10 Pages

恩XP

3400-3600MHz，32 W平均值，48 V Airfast®射频功率GaN晶体管

The A2G35S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. • High Terminal Impedances for Optimal Broadband Performance\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant;

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