丝印：A19；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● TrenchFET Power MOSFET ● Low RDS(ON) ● Surface Mount Package APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter ※ Battery Switch

文件：614.98 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：A19；Package：SOT-23；S OT-23 Plastic-Encapsulate MOSFETS

Features VDS (V) = -40V RDS(ON) 70m (VGS = 10V) ，ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ，ID = -3.5A

文件：874.74 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：A19；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

Features VDS (V) = -40V RDS(ON)

文件：720.02 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：A19；Package：DFN3333-8A；P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology

文件：524.92 Kbytes 页数：6 Pages

LRC

乐山无线电

丝印：A19；Package：DFN3333-8A；P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology.

文件：981.48 Kbytes 页数：5 Pages

LRC

乐山无线电

丝印：A190；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：A190；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01% Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：A1962O；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：A1962R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：A1981；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features High DC Current Gain Complementary Pair with 2SC5344 APPLICATIONS Audio Power Amplifier Application

文件：1.43099 Mbytes 页数：4 Pages

DGNJDZ

南晶电子