Cascadable Amplifier 5 to 500 MHz

Description The A1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8 and

文件：1.32044 Mbytes 页数：2 Pages

MA-COM

Surface Mount Glass Passivated Rectifier

文件：63.72 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

Glass passivated device

文件：527.26 Kbytes 页数：2 Pages

GXELECTRONICS

星合电子

丝印：A1；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

Features • Low forward voltage • Fast reverse recovery time • Small total capacitance

文件：964.04 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

丝印：A1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ243 is a P-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-sav

文件：860.05 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：A1；Package：SOT-23；Surface mount switching diode

FEATURES ● For General Purpose switching Applications. ● Fast Switching Speed. ● High Conductance. ● Surface Mount Package Ideally Suited for Automatic Insertion. APPLICATIONS ● High speed switching application.

文件：136.58 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：A1；Package：SOT-23；Switching Diodes

■ Features ● Fast Switching Speed ● Surface Mount Package Ideally Suited for Automatic Insertion ● For General Purpose Switching Applications ● High Conductance

文件：348.94 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：A1；Package：SOT-323；SOT-323 Plastic-Encapsulate Diode

FEATURES ● Fast Switching Speed ● For General Purpose Switching Applications ● High Conductance

文件：1.25682 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：A1；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：A1；Package：SOT-343R；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current, low voltage • Very high power gain • Low noise figure • Integrated temperature

文件：94.07 Kbytes 页数：12 Pages

PHI

PHI