≥600V MOSFET

WXDH

东海半导体

9A900V N-CHANNEL MOSFET

文件：178.3 Kbytes 页数：7 Pages

KIA

可易亚半导体

Fast Switching Speed

•DESCRIPTION •Drain Current ID= 9A@ TC=25℃ •Drain Source Voltage- : VDSS= 900V(Min) •Fast Switching Speed •APPLICATIONS •General purpose power amplifier

文件：58.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：246.23 Kbytes 页数：6 Pages

UTC

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