N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：246.23 Kbytes 页数：6 Pages

UTC

友顺

9A, 900V N-CHANNEL POWER MOSFET

The UTC 9N90-Q uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device is suitablefor use as a load switch or in PWM applications. • RDS(ON) < 1.4Ω @VGS = 10 V\n• Fast Switching Capability\n• Avalanche Energy Specified\n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

9A900V N-CHANNEL MOSFET

文件：140.39 Kbytes 页数：7 Pages

KIA

可易亚半导体

isc N-Channel MOSFET Transistor

文件：422.1 Kbytes 页数：2 Pages

ISC

无锡固电

900V,9A N-Channel MOSFET

文件：295.6 Kbytes 页数：5 Pages

AOSMD

万国半导体