9H

型号：BC857CQC-Q；Package：DFN1412D-3；45 V, 100 mA PNP general-purpose transistor

1.Generaldescription PNPgeneral-purposetransistorinanultrasmallDFN1412D-3(SOT8009)leadlessSurface- MountedDevice(SMD)plasticpackagewithside-wettableflanks. Table1.Productoverview TypenumberPackage NexperiaJEDEC NPNcomplement: BC857AQC-QBC847AQC-Q BC857BQC-QBC847

9H

型号：BZB784-C11；Package：SOT323；Voltage regulator double diodes

FEATURES •Totalpowerdissipation:max.350mW •Approx.5VZtolerance •Workingvoltagerange:nom.2.4to15V(E24range). APPLICATIONS •Generalregulationfunctions •ESDandsurgeprotection. DESCRIPTION Low-powervoltageregulatordiodesinasmallSOT323 (SC-70)package.

9H

型号：BZB984-C11；Package：SOT663；Voltage regulator double diodes

1.Generaldescription Low-powervoltageregulatordiodesinaSOT663ultrasmallplasticSMDpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤425mW •Approximately5VZtolerance •UltrasmallflatplasticSMDpackage •Workingvoltagerangenominal2.4to15V(E24range)

9H

型号：PESD8V0S1UL；Package：SOD882；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiode,designedtoprotectonesignalline fromthedamagecausedbyESDandothertransients.Thedeviceishousedinaleadlessultra smallDFN1006-2(SOD882)Surface-MountedDevice(SMD)plasticpackage. 2.Featu

9HN65M2

型号：STU9HN65M2；Package：IPAK；N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in an IPAK package

Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedeviceexhibitslowon-resistance andoptimizedswitchingcharacteristics, renderingitsuitableforthemostdemandinghigh efficie

9HN65M2

型号：STF9HN65M2；Package：TO-220FP；N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package