丝印：9H；Package：DFN1412D-3；45 V, 100 mA PNP general-purpose transistor

General description PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joi

文件：248.49 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：9H；Package：DFN1412D-3；45 V, 100 mA PNP general-purpose transistor

1. General description PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface- Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement: BC857AQC-Q BC847AQC-Q BC857BQC-Q BC847

文件：248.33 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：9H；Package：SOT323；Voltage regulator double diodes

FEATURES • Total power dissipation: max. 350 mW • Approx. 5 VZ tolerance • Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package.

文件：192.4 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：9H；Package：SOT663；Voltage regulator double diodes

1. General description Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. 2. Features and benefits • Total power dissipation: ≤ 425 mW • Approximately 5 VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nominal 2.4 to 15 V (E24 range)

文件：275.51 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：9H；Package：SOD882；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode, designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Featu

文件：203 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：9H；Package：X2SON(DPW)；SN74LVC1G14 Single Schmitt-Trigger Inverter

1 Features • Latch-up performance exceeds 100mA per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000V human-body model (A114-A) – 200V machine model (A115-A) – 1000V charged-device model (C101) • Available in the Texas Instruments NanoFree™ package • Supports 5V VCC operation •

文件：2.97754 Mbytes 页数：49 Pages

TI

德州仪器

丝印：9H；Package：X2SON(DPW)；SN74LVC1G14 Single Schmitt-Trigger Inverter

1 Features • Latch-up performance exceeds 100mA per JESD 78, Class II • ESD protection exceeds JESD 22 – 2000V human-body model (A114-A) – 200V machine model (A115-A) – 1000V charged-device model (C101) • Available in the Texas Instruments NanoFree™ package • Supports 5V VCC operation •

文件：2.97754 Mbytes 页数：49 Pages

TI

德州仪器

丝印：9HN65M2；Package：IPAK；N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in an IPAK package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficie

文件：417.34 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：9HN65M2；Package：TO-220FP；N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package

文件：444.36 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

8HT & 9HT SERIES

Features • Energy saving self-regulating PTC heaters - no thermostat required • Multi voltage capability / 240-600 Vac • Solid state reliability • Allows higher compressor E.E.R.’s • Output increases as ambient decreases • Self compensates for voltage variations • PTC element for long life

文件：1.56334 Mbytes 页数：2 Pages

SENSATA

森萨塔