STU9HN65M2

丝印：9HN65M2；Package：IPAK；N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in an IPAK package

Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedeviceexhibitslowon-resistance andoptimizedswitchingcharacteristics, renderingitsuitableforthemostdemandinghigh efficie

STU9HN65M2

N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package; • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. \n \n

STD9HN65M2

100avalanchetested

STF9HN65M2

N-channel600V,0.71廓typ.,5.5AMDmesh??M2PowerMOSFETinaTO-220FPpackage