N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. \n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

100 avalanche tested

文件：505.1 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.82Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in a TO-220FP package

文件：444.36 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.71 廓 typ., 5.5 A MDmesh??M2 Power MOSFET in an IPAK package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficie

文件：417.34 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体