Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on sec

文件：327.55 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • Low Effective Output Capacitance (Coss = 295 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on secon

文件：325.98 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection

文件：329.24 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features • Typ. RDS(on) = 960 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI

文件：375.57 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：349.03 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L

Features • Typ. RDS(on) = 14 m • Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) • 100% Avalanche Tested Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • UPS (Uninterruptible Power Supplies) • Energy Storage Systems • SMPS (Switch Mode Power Supp

文件：333.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features  Typical RDS(ON) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100% Avalanche Tested  AEC−Q101 Qualified and PPAP Capable  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

文件：342.72 Kbytes 页数：9 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2

文件：325.13 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100% Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  S

文件：374.53 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features  Typical RDS(ON) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100% Avalanche Tested  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection)

文件：342.49 Kbytes 页数：9 Pages

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安森美半导体