Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 200 nC) • Low Effective Output Capacitance (typ. Coss = 295 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Co

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Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 22 m • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterrupt

文件：324.94 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(TOT) = 75 nC) • High Speed Switching with Low Capacitance (COSS = 80 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typi

文件：335.85 Kbytes 页数：8 Pages

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MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A

文件：345.47 Kbytes 页数：8 Pages

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MOSFET - SiC Power, Single N-Channel, D2PAK-7L 900 V, 60 m, 44 A

文件：802.73 Kbytes 页数：8 Pages

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